STMicroelectronics STF14NM50N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STF14NM50N |
|---|---|
| Datasheet | STF14NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFETs |
| Buy | Stock & Price |
FEATURES
3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram ' 7$% * 6 $0 Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. Order codes STF14NM50N STI14NM50N STP14NM50N Table 1. Device summary Marking Package 14NM50N TO-220FP I2PAK TO-220 Packaging Tube June 2014 This is information on a product in full production. DocID16832 Rev 7 1/18 18 Contents Contents STF14NM50N, STI14NM50N, STP14NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
