STMicroelectronics STF14NM65N
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge.| Part No. | STF14NM65N |
|---|---|
| Datasheet | STF14NM65N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 3 STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N 12 A 12 A 12 A(1) 12 A 12 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1. Limited only by maximum temperature allowed●
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● 2 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 TO-220FP Application
● Figure 1. Internal schematic diagram Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 14NM65N 14NM65N 14NM65N 14NM65N 14NM65N Package I²PAK D²PAK TO-220FP TO-220 TO-247 Packaging Tube Tape and reel Tube Tube Tube Order codes STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N October 2008 Rev 2 1/18 18 Contents STB/F/I/P/W14NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
