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STF150N10F7 - N-CHANNEL POWER MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Table 1.

Key Features

  • 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness Figure 1. Internal schematic diagram '  .
  •  .

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF150N10F7 N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet − production data Features 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Internal schematic diagram '  *  Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6  $0Y Order code STF150N10F7 Table 1.