Datasheet4U Logo Datasheet4U.com

STF150N10F7 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Table 1.

Features

  • 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness Figure 1. Internal schematic diagram '  .
  •  .

📥 Download Datasheet

Datasheet preview – STF150N10F7

Datasheet Details

Part number STF150N10F7
Manufacturer STMicroelectronics
File Size 757.63 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STF150N10F7 Datasheet
Additional preview pages of the STF150N10F7 datasheet.

📁 Similar Datasheet

Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STF150N10F7 N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet − production data Features 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Internal schematic diagram '  *  Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6  $0Y Order code STF150N10F7 Table 1.
Published: |