STMicroelectronics STF150N10F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STF150N10F7 |
|---|---|
| Datasheet | STF150N10F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness Figure 1. Internal schematic diagram ' *
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STF150N10F7 Table 1. Device summary Marking Package 150N10F7 TO-220FP August 2014 This is information on a product in full production. DocID025818 Rev 2 Packaging Tube 1/13 Contents Contents STF150N10F7 1 Electrical rat
