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STF15N60M2-EP - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.

Key Features

  • Order code STF15N60M2-EP STFI15N60M2-EP VDS@TJmax 650 V RDS(on)max. 0.378 Ω ID 11 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in TO-220FP and I²PAKFP packages Datasheet - production data TO-220FP I2PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1) S(3) AM01476v1 Features Order code STF15N60M2-EP STFI15N60M2-EP VDS@TJmax 650 V RDS(on)max. 0.378 Ω ID 11 A  Extremely low gate charge  Excellent output capacitance (COSS) profile  Very low turn-off switching losses  100% avalanche tested  Zener-protected Applications  Switching applications  Tailored for very high frequency converters (f > 150 kHz) Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.