STMicroelectronics STF15NM65N
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.FEATURES
Type VDSS RDS(on) Max (@Tjmax) 710 V 710 V 710 V 710 V 710 V < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 STB15NM65N STF15NM65N STI15NM65N STP15NM65N STW15NM65N 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 1 2 3 1. Limited only by maximum temperature allowed●
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● 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 1 TO-247 Figure 1. Internal schematic diagram Application
● Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary Order codes STI15NM65N Marking 15NM65N 15NM65N 15NM65N 15NM65N 15NM65N Package I²PAK TO-220FP TO-220 D²PAK TO-247 Packaging Tube Tube Tube Tape & reel Tube STF15NM65N STP15NM65N STB15NM65NT4 STW15NM65N September 2007 Rev 1 1/18 18 Contents STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .