STF15NM65N Overview
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary .st. 18 Contents STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
STF15NM65N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching
