STMicroelectronics STF16N90K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a S(3) AM15572v1_no_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STF16N90K5 |
|---|---|
| Datasheet | STF16N90K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 900V 15A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STF16N90K5 900 V 330 mΩ 15 A 23 1 TO-220FP D(2)● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Product status link STF16N90K5 Product summary Order code STF16N90K5 Marking 16N90K5 Package TO-220FP Packing Tube DS13052 - Rev 1 - August 2019 For further information contact your local STMicroelectronics sales office. STF16N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) PTOT Drain current (pulsed) Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1.
