STMicroelectronics STF18N65DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STF18N65DM2 |
|---|---|
| Datasheet | STF18N65DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 12A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STF18N65DM2 650 V 295 mΩ 12 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected PTOT 28 W
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STF18N65DM2 Product summary Order code STF18N65DM2 Marking 18N65DM2 Package TO-220FP Packing Tube DS12957 - Rev 2 - May 2021 For further information contact your local STMicroelectronics sales office. STF18N65DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope dv/dt(4) MOSFET dv/dt ruggedness VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature range Tj Operating junction temperature range 1.
