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STF18N65DM2 - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. ID STF18N65DM2 650 V 295 mΩ 12 A.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected PTOT 28 W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF18N65DM2 Datasheet N-channel 650 V, 231 mΩ typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package 23 1 TO-220FP D(2) G(1) S(3) AM15572v1_no_tab Features Order code VDS RDS(on) max. ID STF18N65DM2 650 V 295 mΩ 12 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected PTOT 28 W Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.