STMicroelectronics STF19NM50N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STF19NM50N |
|---|---|
| Datasheet | STF19NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applications ' 7$% * 6DESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. $0 Y Order codes STF19NM50N STP19NM50N STW19NM50N Table 1. Device summary Marking Packages TO-220FP 19NM50N TO-220 TO-247 Packaging Tube September 2013 This is information on a product in full production. DocID17079 Rev 2 1/18 Contents Contents STF19NM50N, STP19NM50N, STW19NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
