STMicroelectronics STF1N105K3
This is information on a product in full production.FEATURES
Order codes VDS RDS(on) max ID PTOT STF1N105K3 STFW1N105K3 1050 V STP1N105K3 11 Ω 20 W 1.4 A 60 W● Gate charge minimized
● Extremely large avalanche performance
● 100% avalanche tested
● Very low intrinsic capacitance TAB 3 2 1 TO-220FP 1 3 2 1 TO-3PF 3 2 1 TO-220
APPLICATIONS
● Switching applications Figure 1. Internal schematic diagramDESCRIPTION
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. ' * 6 Table 1. Device summary Order codes STF1N105K3 STFW1N105K3 STP1N105K3 Marking 1N105K3 Package TO-220FP TO-3PF TO-220 $0 Y Packaging Tube January 2013 Doc ID 023509 Rev 2 1/18 18 Contents Contents STF1N105K3, STFW1N105K3, STP1N105K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .