STMicroelectronics STF20N65M5
The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.| Part No. | STF20N65M5 |
|---|---|
| Datasheet | STF20N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STF20N65M5 STFI20N65M5 VDS @ TJmax RDS(on) max 710 V 0.19 Ω ID 18 A● Worldwide best RDS(on) * area
● Higher VDSS rating and high dv/dt capability
● Excellent switching performance
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram $ ' 3 !- V Table 1. Device summary Order codes STF20N65M5 STFI20N65M5 Marking 20N65M5 Package TO-220FP I2PAKFP (TO-281) February 2013 This is information on a product in full production. Doc ID 024223 Rev 1 Packaging Tube 1/15 15 Contents Contents STF20N65M5, STFI20N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
