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STF21NM60ND Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

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General Description

6  These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology.

Utilizing a new strip-layout vertical structure, these revolutionary devices

Overview

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1.

Key Features

  • Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A.
  • Intrinsic fast-recovery body diode.
  • Worldwide best RDS(on).
  • area amongst the fast recovery diode devices.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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