STF21P6LLF6
Features
Order code
VDS RDS(on) max.
PTOT
STF21P6LLF6 -60 V 28.5 mΩ -21 A 25 W
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
Description
This device is a P-channel Power MOSFET developed using the STrip FET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STF21P6LLF6
Table 1: Device summary
Marking
Package
21P6LLF6
TO-220FP
Packing Tape and reel
November 2016
Doc ID029893 Rev 1
This is information on a product in full production.
1/13
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Contents
Contents
1 Electrical ratings 3
2 Electrical characteristics 4
2.1 Electrical characteristics (curves) 6
3 Test circuits...
