STMicroelectronics STF21P6LLF6
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STF21P6LLF6 |
|---|---|
| Datasheet | STF21P6LLF6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID PTOT STF21P6LLF6 -60 V 28.5 mΩ -21 A 25 W● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STF21P6LLF6 Table 1: Device summary Marking Package 21P6LLF6 TO-220FP Packing Tape and reel November 2016 DocID029893 Rev 1 This is information on a product in full production. 1/13 Contents Contents STF21P6LLF6 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ......................................................
