STMicroelectronics STF24NM60N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STF24NM60N |
|---|---|
| Datasheet | STF24NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STF24NM60N STI24NM60N STP24NM60N STW24NM60N●
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● TAB VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max. < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 17 A 1 3 2 3 12 17 A 17 A 17 A TO-220FP I2PAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 2 1 3 TO-220 TO-247
APPLICATIONS
● Switching applications Figure 1. Internal schematic diagramDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. $ OR 4!" ' 3 !- V Table 1. Device summary Marking Package TO-220FP I2PAK 24NM60N Tube TO-220 TO-247 Packaging Order codes STF24NM60N STI24NM60N STP24NM60N STW24NM60N August 2011 Doc ID 18047 Rev 3 1/19 19 Free Datasheet Contents STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
