Datasheet Details
| Part number | STF25N10F7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.23 MB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STF25N10F7 Datasheet
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General Description
These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Table 1.
Key Features
- Order codes STD25N10F7 STF25N10F7 STP25N10F7 VDSS 100 V 100 V 100 V RDS(on) max. (1) 0.035 Ω 0.035 Ω 0.035 Ω ID 25 A 19 A 25 A PTOT 40 W 25 W 50 W 1. @ VGS = 10 V.
- Ultra low on-resistance.
- 100% avalanche tested.