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STF25NM60N - N-CHANNEL MOSFET

General Description

This series of devices is realized with the second generation of MDmesh™ technology.

This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET www.datasheet4u.com TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A 1. Limited only by maximum temperature allowed ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology.