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STF28N60M2 - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Features

  • 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram Order code VDS @ TJmax RDS(on) max STF28N60M2 STFI28N60M2 650 V 0.150 Ω ID 22 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STF28N60M2

Datasheet Details

Part number STF28N60M2
Manufacturer STMicroelectronics
File Size 883.56 KB
Description N-channel Power MOSFET
Datasheet download datasheet STF28N60M2 Datasheet
Additional preview pages of the STF28N60M2 datasheet.

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Full PDF Text Transcription

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STF28N60M2, STFI28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram Order code VDS @ TJmax RDS(on) max STF28N60M2 STFI28N60M2 650 V 0.150 Ω ID 22 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.
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