STF30N10F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STF30N10F7 Table 1: Device summary Marking Package 30N10F7 TO-220FP Packing Tube September 2016 DocID029717 Rev 1 This is information on a product in full production.
STF30N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
