Click to expand full text
STF30N10F7
N-channel 100 V, 0.02 Ω typ., 24 A STripFET™ F7
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP Figure 1: Internal schematic diagram
Features
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STF30N10F7 Datasheet
