STF30N10F7 Overview
STF30N10F7 N-channel 100 V, 0.02 Ω typ., 24 A STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram Features Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate...
STF30N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
