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STF45N10F7 - N-CHANNEL POWER MOSFET

General Description

This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • Order code STF45N10F7 VDS 100 V RDS(on) max. (1) 0.018 Ω ID 30 A PTOT 25 W 1. @ VGS = 10 V.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF45N10F7 N-channel 100 V, 0.0145 Ω typ., 30 A, STripFET™ VII DeepGATE™ Power MOSFET in a TO-220FP package Datasheet - production data 3 2 1 TO-220FP Features Order code STF45N10F7 VDS 100 V RDS(on) max.(1) 0.018 Ω ID 30 A PTOT 25 W 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram '  Description th This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *  6  $0Y Order codes STF45N10F7 Table 1. Device summary Marking Package 45N10F7 TO-220FP Packaging Tube November 2013 This is information on a product in full production.