STF7N80K5 Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate S(3) charge for applications requiring superior power AM01476v1_No_tab density and high efficiency. Device summary Marking Package Packing 7N80K5 TO-220FP I²PAKFP (TO-281) Tube July 2017 DocID025377.
STF7N80K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected