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STF7NM80 - N-channel Power MOSFET

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics.

Features

  • Order code VDS RDS(on) max. STF7NM80 800 V 1.05 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 6.5 A.

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Datasheet preview – STF7NM80

Datasheet Details

Part number STF7NM80
Manufacturer STMicroelectronics
File Size 477.43 KB
Description N-channel Power MOSFET
Datasheet download datasheet STF7NM80 Datasheet
Additional preview pages of the STF7NM80 datasheet.

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Full PDF Text Transcription

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STF7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_noTab Features Order code VDS RDS(on) max. STF7NM80 800 V 1.05 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 6.5 A Applications • Switching applications Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics.
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