STF9NM60N Datasheet | STMicroelectronics

STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Application Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2...