STFU24N60M2 Datasheet | STMicroelectronics

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package - production data 3 2 1 TO-220FP ultra narrow leads Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFU24N60M2 VDS 600 V RDS(on) max 0.19 Ω ID 18 A - Extremely low gate charge - Lower RDS(on) x area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected Applications - Switching applications - LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low...