STG35M120F3D7
STG35M120F3D7 is IGBT manufactured by STMicroelectronics.
1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing
Features
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
Applications
- Motor control
- Industrial drives
EGCD
- PFC
- UPS
- Solar
- General purpose inverter
Product status STG35M120F3D7
Product summary
Order code
VCE 1200 V
ICN 35 A
Die size
6.44 x 5.74 mm²
Packing
D7
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of...
