STG35M120F3D7 - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STG35M120F3D7
Manufacturer	STMicroelectronics
File Size	179.70 KB
Description	IGBT
Datasheet	STG35M120F3D7 Datasheet
Additional preview pages of the STG35M120F3D7 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Features

10 μs of short-circuit withstand time.
Low VCE(sat) = 1.85 V (typ. ) @ IC = 35 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Maximum junction temperature: TJ = 175 °C.

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Published: May 6, 2020 |