STGAP2SiCD Overview
Key Specifications
Package: LSOP
Operating Voltage: 5 V
Max Voltage (typical range): 5.5 V
Min Voltage (typical range): 3.1 V
Description
The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high power applications such as power conversion and industrial motor drivers inverters.
Key Features
- High voltage rail up to 1200 V
- Driver current capability: 4 A sink/source @ 25 °C
- dV/dt transient immunity ±100 V/ns
- Overall input-output propagation delay: 75 ns
- Separate sink and source option for easy gate driving configuration
- 4 A Miller CLAMP
- UVLO function
- Configurable interlocking function
- Dedicated SD and BRAKE pins
- Gate driving voltage up to 26 V
