STGB14NC60KD Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Internal schematic diagram Table 1. 16 Contents Contents STGB14NC60KD, STGF14NC60KD, STGP1.
STGB14NC60KD Key Features
- Short circuit withstand time 10µs
- Low on-voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross conduction
- Switching losses include diode recovery
- Very soft ultra fast recovery antiparallel diode