Datasheet4U Logo Datasheet4U.com

STGB14NC60KD - 600V short-circuit rugged IGBT

General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Figure 1.

Table 1.

Key Features

  • Short circuit withstand time 10µs.
  • Low on-voltage drop (VCE(sat)).
  • Low Cres / Cies ratio (no cross conduction susceptibility).
  • Switching losses include diode recovery energy.
  • Very soft ultra fast recovery antiparallel diode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STGB14NC60K N-CHANNEL IGBT ST Microelectronics
STGB10HF60KD Short-circuit Rugged IGBT ST Microelectronics
STGB10N60L N-CHANNEL IGBT ST Microelectronics
STGB10NB37LZ IGBT ST Microelectronics
STGB10NB40LZ N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGB14NC60KDT4 600V short-circuit rugged IGBT
STGB10H60DF 600V 10A IGBT
STGB10M65DF2 Trench gate field-stop IGBT
STGB10NB40LZT4 410V internally clamped IGBT
STGB10NC60K short-circuit rugged IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB14NC60KD STGF14NC60KD, STGP14NC60KD 14 A, 600 V - short-circuit rugged IGBT Features ■ Short circuit withstand time 10µs. ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Switching losses include diode recovery energy ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency inverters ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. TAB 2 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1.