STGB15H60DF
Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters.
Key Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low - Short-circuit rated
- Ultrafast soft recovery antiparallel diode
