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STGB15H60DF - Trench gate field-stop IGBT

Datasheet Summary

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short-circuit rated.
  • Ultrafast soft recovery antiparallel diode.

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Datasheet preview – STGB15H60DF

Datasheet Details

Part number STGB15H60DF
Manufacturer STMicroelectronics
File Size 3.42 MB
Description Trench gate field-stop IGBT
Datasheet download datasheet STGB15H60DF Datasheet
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STGB15H60DF, STGF15H60DF, STGP15H60DF Datasheet Trench gate field-stop IGBT, H series 600 V, 14 A high speed TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS • PFC Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.
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