STGB20N40LZ Overview
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
STGB20N40LZ Key Features
- Designed for automotive
STGB20N40LZ Applications
- ESD gate-emitter protection