STGB30H65DFB2 Overview
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT.
STGB30H65DFB2 Key Features
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient