STMicroelectronics STGB8NC60KD
This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.| Part No. | STGB8NC60KD |
|---|---|
| Datasheet | STGB8NC60KD Download |
| Manufacturer |  STMicroelectronics |
| Description | short circuit rugged IGBT |
| Buy | Stock & Price |
FEATURES
● Lower on voltage drop (VCE(sat))● Lower Cres / Cies ratio (no cross-conduction susceptibility)
● Very soft ultra fast recovery antiparallel diode
● Short-circuit withstand time 10 μs
APPLICATIONS
● High frequency motor controls● SMPS and PFC in both hard switch and resonant topologies
● Motor drives
DESCRIPTION
These devices are very fast IGBTs developed using advanced PowerMESH technology. Product status links STGB8NC60KD STGD8NC60KD STGF8NC60KD STGP8NC60KD DS5489 - Rev 3 - June 2023 For further information contact your local STMicroelectronics sales office. STGB8NC60KD, STGD8NC60KD, STGF8NC60KD, STGP8NC60KD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter D²PAK, TO-220 Value DPAK VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C 15 IC(1) Continuous collector current at TC = 100 °C 8 ICL(2) Turn-off latching current 30 ICP(3) Pulsed collector current 30 VGE Gate-emitter voltage ±20 IF Diode...
