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STGD10NC60H - N-channel IGBT

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Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Features

  • Type STGD10NC60H.
  • VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK.

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www.DataSheet4U.com STGD10NC60H N-channel 10A - 600V - DPAK Very fast PowerMESH™ IGBT Features Type STGD10NC60H ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop.
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