Datasheet4U Logo Datasheet4U.com

STGD10NC60H - N-channel IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • Type STGD10NC60H.
  • VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STGD10NC60K N-CHANNEL IGBT ST Microelectronics
STGD10NC60S Fast IGBT ST Microelectronics
STGD10NC60SD 10A - 600V Fast IGBT ST Microelectronics
STGD14NC60K N-CHANNEL IGBT ST Microelectronics
STGD3HF60HD 600V Very Fast IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGD10NC60HD very fast IGBT
STGD10NC60KD 600V short-circuit rugged IGBT
STGD10NC60KDT4 600V short-circuit rugged IGBT
STGD10HF60KD short-circuit rugged IGBT
STGD18N40LZ Automotive-grade 390V internally clamped IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STGD10NC60H N-channel 10A - 600V - DPAK Very fast PowerMESH™ IGBT Features Type STGD10NC60H ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop.