Datasheet4U Logo Datasheet4U.com

STGD25N36LZAG - Automotive-grade 360V internally clamped IGBT

Download the STGD25N36LZAG datasheet PDF. This datasheet also covers the STGB25N36LZAG variant, as both devices belong to the same automotive-grade 360v internally clamped igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems.

Key Features

  • AEC-Q101 qualified.
  • SCIS energy of 300 mJ @ TJ = 25 °C.
  • Parts are 100% tested in SCIS.
  • ESD gate-emitter protection.
  • Gate-collector high voltage clamping.
  • Logic level gate drive.
  • Very low saturation voltage.
  • High pulsed current capability.
  • Gate and gate-emitter resistor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB25N36LZAG-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STGD10NC60K N-CHANNEL IGBT ST Microelectronics
STGD10NC60S Fast IGBT ST Microelectronics
STGD10NC60SD 10A - 600V Fast IGBT ST Microelectronics
STGD14NC60K N-CHANNEL IGBT ST Microelectronics
STGD3HF60HD 600V Very Fast IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGD25N40LZAG Automotive-grade 400V internally clamped IGBT
STGD20N40LZ Automotive-grade 390V internally clamped IGBT
STGD20N45LZAG Automotive-grade 450V internally clamped IGBT
STGD10HF60KD short-circuit rugged IGBT
STGD10NC60H N-channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB25N36LZAG, STGD25N36LZAG, STGI25N36LZAG Datasheet Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ TAB 2 3 D2PAK1 TAB 23 1 DPAK TAB I 2PAK 1 2 3 C (2 or TAB) Features • AEC-Q101 qualified • SCIS energy of 300 mJ @ TJ = 25 °C • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Applications G (1) RG RGE • Automotive ignition coil driver circuit Description E (3) IGBTG1C2TABE3ESD This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems.