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STGD3NC60HD - N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • TYPE STGD3NC60HDT4 s s s Figure 1: Package VCES 600 V VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A s s s s LOWER ON-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGD3NC60HD www.DataSheet4U.com N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGD3NC60HDT4 s s s Figure 1: Package VCES 600 V VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A s s s s LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION 3 1 DPAK Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.