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STGD3NC60HD
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N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: General Features
TYPE STGD3NC60HDT4
s s s
Figure 1: Package
VCES 600 V
VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A
s s s
s
LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION
3 1
DPAK
Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.