STGD3NC60HD
Features
TYPE STGD3NC60HDT4 s s s
Figure 1: Package
VCES 600 V
VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A s s s s
LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION
3 1
DPAK
Figure 2: Internal Schematic Diagram DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s MOTOR DRIVERS s
Table 2: Order Code
PART NUMBER STGD3NC60HDT4 MARKING GD3NC60HD PACKAGE DPAK...
