STMicroelectronics STGD5NB120SZ
This device is low drop internally clamped IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.| Part No. | STGD5NB120SZ |
|---|---|
| Datasheet | STGD5NB120SZ Download |
| Manufacturer |  STMicroelectronics |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Low on-voltage drop (VCE(sat))● High current capability
● High voltage clamping
APPLICATIONS
● Low switching frequency applicationsDESCRIPTION
Product status link STGD5NB120SZ Product summary Order code STGD5NB120SZ Marking GD5NB120SZ Package DPAK Packing Tape and reel DS3341 - Rev 10 - April 2023 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current ICL(2) Turn-off latching current VGE Gate-emitter voltage VECR Emitter-collector voltage PTOT Total power dissipation at TC = 25 °C TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width is limited by maximum junction temperature. 2. VCLAMP = 80% VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C. Symbol RthJC RthJA Table 2. Thermal data Parameter Ther...
