STMicroelectronics STGD7NB120S-1
The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. <1kHz).APPLICATIONS
s LIGHT DIMMER s INRUSH CURRENT LIMITATION s MOTOR CONTROL 3 2 1 IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V CES V ECR V GE IC IC I CM (● ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 1200 20 ± 20 10 7 20 55 0.4 -65 to 150 150 Un it V V V A A A W W /o C o o C C (●) Pulse width limited by safe operating area April 2000 1/6 STGD7NB120S-1 THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistan...