DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s LOW FREQUENCY MOTOR CONTROLS s ALUMINUM WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 ±20 200 150 400 600 4.8 – 65 to 150 150 Unit V V A A A W W/°C °C °C ( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA June 2003 1/9 STGE200NB60S THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.208 30 °C/W °C/W ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIF...
STMicroelectronics
