STMicroelectronics STGF10M65DF2
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.| Part No. | STGF10M65DF2 |
|---|---|
| Datasheet | STGF10M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 10A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● 6 µs of short-circuit withstand time● VCE(sat) = 1.55 V (typ.) @ IC = 10 A
● Tight parameter distribution
● Safer paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Soft and very fast recovery antiparallel diode
● Maximum junction temperature: TJ = 175 °C TO-220FP Figure 1: Internal schematic diagram C (2)
APPLICATIONS
● Motor control● UPS
● PFC
● General purpose inverter G (1) Sc12850_no_tab E (3)
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGF10M65DF2 Table 1: Device summary Marking G10M65DF2 Package TO-220FP Packing Tube April 2017 DocID027428 Rev 7 This is information on a product in full production. 1/17 Contents Contents STGF10M65DF2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ......................................................
