STMicroelectronics STGF14NC60KD
This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.FEATURES
● Low on voltage drop (VCE(sat))● Low Cres / Cies ratio (no cross-conduction susceptibility)
● Very soft ultra-fast recovery antiparallel diode
● Short-circuit withstand time 10 μs
APPLICATIONS
● High frequency inverters● SMPS and PFC in both hard switch and resonant topologies
● Motor drives
DESCRIPTION
These devices are very fast IGBTs developed using advanced PowerMESH technology. Product status links STGB14NC60KDT4 STGF14NC60KD STGP14NC60KD DS4321 - Rev 9 - May 2025 For further information, contact your local STMicroelectronics sales office. STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value D²PAK, TO-220 TO-220FP VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C IC(1) Continuous collector current at TC = 100 °C 25 11 14 7 ICL(2) Turn-off latching current 50 ICP(3) Pulsed collector current 50 VGE Gate-emitter voltage ±20 IF Diode RMS forward cu...