STGF20M65DF2
Features
- High short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
- General-purpose inverters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Product status link STGF20M65DF2
Product summary
Order code
Marking
G20M65DF2
Package
TO-220FP
Packing
Tube
DS11363
- Rev 4
- October 2018 For further information contact your local STMicroelectronics sales office.
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Electrical ratings
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