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STGF20M65DF2 - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Key Features

  • High short-circuit withstand time.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 20 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGF20M65DF2 Datasheet Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT 23 1 TO-220FP C (2) G (1) Sc12850_no_tab E (3) Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.