STMicroelectronics STGF30H60DF
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.FEATURES
● High speed switching● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● Short circuit rated
● Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1)
APPLICATIONS
● Inverter● UPS
● PFC
DESCRIPTION
Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. E (3) Order codes STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF Table 1. Device summary Marking Package GB30H60DF D²PAK GF30H60DF TO-220FP GP30H60DF TO-220 GW30H60DF TO-247 Packaging Tape and reel Tube March 2013 This is information on a product in full production. DocID022363 Rev 3 1/24 24 Contents Contents STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .