STGF5H60DF Datasheet | STMicroelectronics

STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5H60DF Trench gate field-stop 600 V, 5 A high speed H series IGBT 3 1 D2 PAK TAB 23 1 DPAK 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features - High-speed switching - Tight parameter distribution - Safe paralleling - Low thermal resistance - Short-circuit rated - Ultrafast soft recovery antiparallel diode Applications - Motor control - UPS - PFC Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB5H60DF STGD5H60DF STGF5H60DF STGP5H60DF DS10745 - Rev...