STMicroelectronics STGF6M65DF2
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.| Part No. | STGF6M65DF2 |
|---|---|
| Datasheet | STGF6M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 6A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● 6 µs of short-circuit withstand time● VCE(sat) = 1.55 V (typ.) @ IC = 6 A
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast recovery antiparallel diode
APPLICATIONS
● Motor control● UPS
● PFC
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Sc12850_no_tab E (3) Order code STGF6M65DF2 Table 1: Device summary Marking G6M65DF2 Package TO-220FP Packing Tube August 2016 DocID028668 Rev 3 This is information on a product in full production. 1/17 Contents Contents STGF6M65DF2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 STGF6M65DF2 electrical characteristics curves .............................. 7 3 Test circuits ...................................................................................
