GENERAL FEATURES
TYPE STGF7NB60SL s s s s s Figure 1: Package IC @100°C 40 A VCES 200 V VCE(sat) (Max) @25°C < 0.045 Ω POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 1 2 DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. <1kHz). Figure 2: Internal Schematic Diagram APPLICATIONS
LIGHT DIMMER s STATIC RELAYS s Table 2: Order Codes SALES TYPE STGF7NB60SL MARKING GF7NB60SL PACKAGE TO-220FP PACKAGING TUBE Rev. 2 June 2004 1/9 STGF7NB60SL Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM (1) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C.
STMicroelectronics
