STMicroelectronics STGFW40H65FB
The diode is the same of the co-packed STGW40H65DFB.| Part No. | STGFW40H65FB |
|---|---|
| Datasheet | STGFW40H65FB Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 40A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A
● Safe paralleling
● Tight parameter distribution
● Low thermal resistance
APPLICATIONS
● Welding● PFC converters - single phase input
● Solar inverters (string and central)
● Uninterruptable power supplies (UPS)
● EV charging - DC fast charging stations
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. DS9908 - Rev 9 - December 2024 For further information contact your local STMicroelectronics sales office. STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical ratings 1 Electrical ratings Table 1.
