STMicroelectronics STGFW50HP65FB2
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.| Part No. | STGFW50HP65FB2 |
|---|---|
| Datasheet | STGFW50HP65FB2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 50A high-speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
● Co-packaged protection diode
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Positive VCE(sat) temperature coefficient
APPLICATIONS
● Welding● Power factor correction
DESCRIPTION
A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status links STGFW50HP65FB2 STGWA50HP65FB2 Product summary Order code STGFW50HP65FB2 Marking G50HP65FB2 Package TO-3PF Packing Tube Order code STGWA50HP65FB2 Marking G50HP65FB2 Package TO-247 long leads Packing Tube DS13184 - Rev 5 - February 2026 For further information, contact your local STMicroelectronics sales office. STGFW50HP65FB2, STGWA50HP65FB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-3PF TO-247 long leads VCES C...
