STGIPNS3H60T-H Key Features
- IPM 3 A, 600 V, 3-phase inverter IGBT including control ICs for gate driving and freewheeling diodes
- Optimized for low electromagnetic interference
- VCE(sat) negative temperature coefficient
- 3.3 V, 5 V, 15 V CMOS/TTL inputs parators with hysteresis and pull-down/
- Undervoltage lockout
- Internal bootstrap diode
- Interlocking function
- Shutdown function
- parator for fault protection against overcurrent
- Op-amp for advanced current sensing