STMicroelectronics STGP10HF60KD
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.FEATURES
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● Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 3 1 3 1 2 1 3 2 TO-220FP TAB TAB TO-220
APPLICATIONS
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● 3 1 DPAK Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies Figure 1. D2PAK Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking GB10HF60KD GD10HF60KD GF10HF60KD GP10HF60KD Package D2PAK DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Tube Order codes STGB10HF60KDT4 STGD10HF60KDT4 STGF10HF60KD STGP10HF60KD August 2009 Doc ID 16136 Rev 1 1/14 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STGx10HF60KD Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .