DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. <1kHz). TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 20 10 80 30 0.2 2500 –65 to 150 175 Unit V V V A A A W W/°C V °C °C (q ) Pulse width limited by safe operating area November 2002 1/8 STGP10NB60SDFP THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Th...
STMicroelectronics
