DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. <1kHz). TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM (n) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 20 10 80 31.5 0.21 –65 to 150 150 Unit V V V A A A W W/°C °C °C (q ) Pulse width limited by safe operating area June 2002 1/8 STGP10NB60SFP THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Ty...
STMicroelectronics
