STMicroelectronics STGP14HF60KD
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.FEATURES
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● Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 1 2 1 3 2 3 TO-220FP TO-220
APPLICATIONS
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● Motor drives High frequency inverters SMPS and PFC in both hard switch and resonant topologies Figure 1. Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking GF14HF60KD GP14HF60KD Package TO-220FP TO-220 Packaging Tube Tube Order codes STGF14HF60KD STGP14HF60KD August 2009 Doc ID 16118 Rev 1 1/12 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STGF14HF60KD, STGP14HF60KD Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .