STMicroelectronics STGP18N40LZ
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.FEATURES
● Designed for automotive applications and AEC-Q101 qualified● 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
● ESD gate-emitter protection
● Gate-collector high voltage clamping
● Logic level gate drive
● Low saturation voltage
● High pulsed current capability
● Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Application
● Pencil coil electronic ignition driver G (1) RG RGE
DESCRIPTION
The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. E (3) SC30180 Order codes STGB18N40LZT4 STGD18N40LZ-1 STGD18N40LZT4 STGP18N40LZ Table 1. Device summary Marking Package GB18N40LZ GD18N40LZ GD18N40LZ GP18N40LZ D²PAK IPAK DPAK TO-220 Packaging Tape and reel Tube Tape and reel Tube November 2014 This is information on a product in full production. DocID14322 Rev 6 1/25 Contents Contents STGB18N40LZT4 , STGD18N40LZ ,STGP18N40LZT4 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .